PART |
Description |
Maker |
2N6172 |
SCR, V(DRM) =200V TO 299.9V
|
New Jersey Semi-Conductor Products, Inc.
|
2N2326 |
SCR, V(DRM) = 200 V TO 299.9 V
|
New Jersey Semi-Conductor Products, Inc.
|
HN29W25611T HN29W25611T-50H |
256M AND type Flash Memory More than 16,057-sector (271,299,072-bit)
|
HITACHI[Hitachi Semiconductor]
|
HN29W25611T-50 |
256M AND type Flash Memory More than 16/057-sector (271/299/072-bit) 256M AND type Flash Memory More than 16,057-sector (271,299,072-bit)
|
Hitachi Semiconductor Hitachi,Ltd.
|
CS92-2M CS92-2N |
SILICON CONTROLLED RECTIFIER 2.0 AMP, 600 THRU 800 VOLTS 2 A, 800 V, SCR, TO-92
|
Central Semiconductor Corp. Central Semiconductor, Corp.
|
0458021223-17 |
1.20mm by 2.00mm Pitch HD Mezz Receptacle, 299 Circuits, 18.00mm Unmated 1.20mm by 2.00mm Pitch HD Mezz?Receptacle, 299 Circuits, 18.00mm Unmated
|
Molex Electronics Ltd.
|
MAC320-10 MAC320-4 MAC320-6 MAC320-8 MAC320A10 MAC |
TRIACs 20 AMPERES RMS 200 thru 800 VOLTS 200 V, 20 A, TRIAC, TO-220AB TRIACs 20 AMPERES RMS 200 thru 800 VOLTS 600 V, 20 A, TRIAC, TO-220AB RF/Coaxial Connector; RF Coax Type:MMCX; Impedance:50ohm; Body Style:Straight Plug; Frequency Max:6GHz; Mounting Type:Edge Card; Voltage Rating:170V RoHS Compliant: Yes 800 V, 20 A, TRIAC, TO-220AB TRIACs 20 AMPERES RMS 200 thru 800 VOLTS 800 V, 20 A, TRIAC, TO-220AB
|
Motorola Mobility Holdings, Inc. Motorola, Inc.
|
2N6509TG |
Silicon Controlled Rectifiers Reverse Blocking Thyristors SCRs 25 AMPERES RMS 50 thru 800 VOLTS 25 A, 800 V, SCR, TO-220AB
|
ON Semiconductor
|
0458301223 45830-1223 |
1.20mm (.047) by 2.00mm (.079) Pitch HD Mezz Plug, 299 Circuits, 18.00mm (.708) Unmated
|
Molex Electronics Ltd.
|
APT17F80S APT17F80B |
Power FREDFET; Package: D3 [S]; ID (A): 18; RDS(on) (Ohms): 0.58; BVDSS (V): 800; 18 A, 800 V, 0.58 ohm, N-CHANNEL, Si, POWER, MOSFET 18 A, 800 V, 0.58 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
Microsemi, Corp. MICROSEMI POWER PRODUCTS GROUP
|
70280-0019 A-70280-0019 0010897381 |
2.54mm (.100) Pitch C-Grid? Breakaway Header, Dual Row, Vertical, High Temperature, 38 Circuits, Tin (Sn) Plating, 2.72mm (.107) PC Tail Length 2.54mm (.100") Pitch C-Grid庐 Breakaway Header, Dual Row, Vertical, High Temperature, 38 Circuits, Tin (Sn) Plating, 2.72mm (.107") PC Tail Length 2.54mm (.100") Pitch C-Grid垄莽 Breakaway Header, Dual Row, Vertical, High Temperature, 38 Circuits, Tin (Sn) Plating, 2.72mm (.107") PC Tail Length
|
Molex Electronics Ltd.
|
|